| PART |
Description |
Maker |
| ICS663 663MILFT 663MLF 663MLFT |
PLL BUILDING BLOCK Phase detector and VCO blocks can be used Lower power CMOS process
|
Integrated Device Technology
|
| AP9404GM-HF AP9404GM-HF14 |
Lower Gate Charge, Fast Switching Characteristic
30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP2606GY-HF AP2606GY-HF-14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP2604GY-HF AP2604GY-HF-14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| AP2342GK-HF AP2342GK-HF14 |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP9563GH09 AP9563GJ09 |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
